| PART |
Description |
Maker |
| LBSS138WT1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| MGSF1N03LT1 MGSF1N03LT3 MGSF1N03LT3G MGSF1N03L MGS |
Power MOSFET 750 mAmps, 30 Volts
Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23
From old datasheet system
|
ON Semiconductor
|
| RF1K49093 FN3969 |
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFETPower MOSFET
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET⑩ Power MOSFET
From old datasheet system
2.5A 12V 0.130 Ohm Logic Level Dual P-Channel LittleFET Power MOSFET
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET
2.5A/ 12V/ 0.130 Ohm/ Logic Level/ Dual P-Channel LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| MMBF0201NLT1 MMBF0201NL MMBF0201NLT1-D |
Power MOSFET 300 mAmps, 20 Volts N-Channel SOT-23
|
ON Semiconductor
|
| LBSS138LT1G LBSS138LT1 |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
LRC[Leshan Radio Company]
|
| LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
乐山无线电股份有限公
|
| NTES1N02 |
Power MOSFET 50 mAmps, 20 Volts N-Channel(50mA,20V,N沟道增强型MOS场效应管)
|
ON Semiconductor
|
| BSS138LT1/D BSS138LT1-D |
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
| MGSF1N02LT105 MGSF1N02LT3G MGSF1N02LT1 MGSF1N02LT1 |
Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
ONSEMI[ON Semiconductor]
|
| MMBF170LT1 MMBF170LT1G MMBF170LT3 MMBF170LT3G |
Power MOSFET 500 mAmps, 60 Volts
Power MOSFET 500 mA, 60 V
|
ONSEMI[ON Semiconductor]
|
| VN2222LL VN2222LLRLRM VN2222LLG VN2222LLRL VN2222L |
Small Signal MOSFET 150 mAmps, 60 Volts
|
ONSEMI[ON Semiconductor]
|
| 2N7000RLRPG 2N7000G 2N7000ZL1G |
Small Signal MOSFET 200 mAmps 60 Volts
|
ON Semiconductor
|
